Ключевые слова: chalcogenide, electrodeposition, films, fabrication, voltage, X-ray diffraction, microstructure, experimental results
Mancini A., Rufoloni A., Vannozzi A., Celentano G., Braccini V., Putti M., Augieri A., Piperno L., Masi A., Cialone M., Iebole M., Botti S., Bonfigli F., Savio L.
Ключевые слова: chalcogenide, coated conductors, films, IBAD process, substrate Hastelloy, PLD process, buffer layers, X-ray diffraction, microstructure, resistive transition, critical temperature, upper critical fields, irreversibility fields, temperature dependence, critical caracteristics, Jc/B curves, pinning force
Ключевые слова: pnictides, chalcogenide, fabrication, high pressure processing, gas treatments, resistive transition, pressure dependence
Takano Y., Hoshi K., Mizuguchi Y., Yamashita A., Miura A., Matsumoto R., Nakahira Y., Yamane K., Kadobayashi H., Kawaguchi S.I.
Hanisch J., Chen M., Iida K., Ikuta H., Tarantini C., Yamamoto A., Wang C., Gao H., Hata S., Kondo K., Naito M., Guo Z., Hatano T., Saito H., Qin D.
Ключевые слова: chalcogenide, fabrication, solid-state synthesis, targets, X-ray diffraction, microstructure, composition, density
Piperno L., Vannozzi A., Pinto V., Augieri A., Armenio A.A., Rizzo F., Mancini A., Rufoloni A., Celentano G., Braccini V., Cialone M., Iebole M., Manca N., Martinelli A., Putti M., Sotgiu G., Meledin A.
Ключевые слова: thin films, effect, pnictides, doping, chalcogenide, lattice parameter, critical temperature, thickness dependence, fabrication, review, resistivity, temperature dependence, susceptibility, magnetic field dependence, resistive transition, current-voltage characteristics, large-scale applications
Ключевые слова: experimental results, chalcogenide, FeSeTe, coated conductors, PLD process, substrate Hastelloy, IBAD process, buffer layers, magnetron sputtering, targets, X-ray diffraction, thickness dependence, lattice parameter, resistive transition, critical temperature, microstructure, critical current density, pnictides, comparison, critical caracteristics, upper critical fields, Jc/B curves, temperature dependence, pinning force
Ключевые слова: high field magnets, chalcogenide, coated conductors, tapes, PIT process, strain effects, critical current density, n-value
Ключевые слова: chalcogenide, pnictides, wires, tapes, grain boundaries, films epitaxial
Ключевые слова: chalcogenide, FeSeTe, coated conductors, PLD process, IBAD process, RABITS process, substrate Hastelloy, template layers, thin films, substrate single crystal, comparison, X-ray diffraction, lattice parameter, resistive transition, magnetization, temperature dependence, critical caracteristics, Jc/B curves, microstructure, fabrication, experimental results
Ключевые слова: chalcogenide, thin films, coated conductors, fabrication, substrate metallic, PLD process, review, IBAD process, buffer layers, critical caracteristics, Jc/B curves, critical current density, angular dependence, anisotropy, X-ray diffraction, resistivity, temperature dependence, magnetic field dependence, upper critical fields, irreversibility fields, pinning force, microstructure, experimental results
Mancini A., Rufoloni A., Vannozzi A., Braccini V., Putti M., Manfrinetti P., Rizzo F., Augieri A., Silva E., Armenio A.A., Pinto V., Piperno L., Sylva G., Masi A., Prili S., Celentano E.S.
Ключевые слова: chalcogenide, FeSeTe, films, PLD process, fabrication, buffer layers, films epitaxial, chemical solution deposition, substrate single crystal, substrate sapphire, substrate SrTiO3, X-ray diffraction, microstructure, resistive transition, resistance, temperature dependence, critical caracteristics, Jc/B curves, pinning force
Ключевые слова: chalcogenide, FeSe, wires, doping effect, fabrication, sintering, PIT process, ex-situ process, X-ray diffraction, microstructure, resistivity, temperature dependence, resistive transition, magnetic field dependence, upper critical fields, critical caracteristics, current-voltage characteristics, experimental results
Sylva G., Bellingeri E., Bernini C., Celentano G., Ferdeghini C., Leveratto A., Lisitskiy M., Malagoli A., Manca N., Mancini A., Manfrinetti P., Pallecchi I., Provino A., Putti M., Vannozzi A., Braccini V.
Ключевые слова: chalcogenide, FeSeTe, coated conductors, buffer layers, texture, thickness dependence, RABITS process, substrate Hastelloy, substrate Ni-W, X-ray diffraction, microstructure, resistive transition, magnetic field dependence, critical caracteristics, Jc/B curves, critical temperature, upper critical fields
Abdyukhanov I.M., Lukyanov P.A., Pervakov K.S., Vlasenko V.A., Tsapleva A.S., Eltsev Y.F., Berbentsev V.D., Pudalov V.M.
Murakami M., Koblischka M.R., Koblischka-Veneva A., Muralidhar M., Douine B., Berger K., Nouailhetas Q.
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